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Other articles related with "resistance switching"：
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48505 |
Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮) |
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A method of generating random bits by using electronic bipolar memristor |
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Chin. Phys. B
2020 Vol.29 (4): 48505-048505
[Abstract]
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(132)
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87702 |
Qi Mao(毛奇), Wei-Jian Lin(林伟坚), Ke-Jian Zhu(朱科建), Yang Meng(孟洋), Hong-Wu Zhao(赵宏武) |
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Synergistic effects of electrical and optical excitations on TiO2 resistive device |
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Chin. Phys. B
2017 Vol.26 (8): 87702-087702
[Abstract]
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[HTML 1 KB]
[PDF 512 KB]
(226)
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117701 |
Da Chen(陈达), Shi-Hua Huang(黄仕华) |
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Threshold resistance switching in silicon-rich SiOx thin films |
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Chin. Phys. B
2016 Vol.25 (11): 117701-117701
[Abstract]
(534)
[HTML 1 KB]
[PDF 447 KB]
(427)
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87304 |
Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国) |
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Bipolar resistance switching in the fully transparent BaSnO3-based memory device |
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Chin. Phys. B
2014 Vol.23 (8): 87304-087304
[Abstract]
(488)
[HTML 1 KB]
[PDF 2175 KB]
(817)
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58501 |
Qiao Shi-Zhu (乔士柱), Kang Shi-Shou (康仕寿), Qin Yu-Feng (秦羽丰), Li Qiang (李强), Zhong Hai (钟海), Kang Yun (康韵), Yu Shu-Yun (于淑云), Han Guang-Bing (韩广兵), Yan Shi-Shen (颜世申), Mei Liang-Mo (梅良模) |
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Multi-polar resistance switching and memory effect in copper phthalocyanine junctions |
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Chin. Phys. B
2014 Vol.23 (5): 58501-058501
[Abstract]
(575)
[HTML 1 KB]
[PDF 1657 KB]
(531)
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67202 |
Shang Da-Shang (尚大山), Sun Ji-Rong (孙继荣), Shen Bao-Gen (沈保根), Wuttig Matthias |
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Resistance switching in oxides with inhomogeneous conductivity |
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Chin. Phys. B
2013 Vol.22 (6): 67202-067202
[Abstract]
(781)
[HTML 1 KB]
[PDF 4383 KB]
(1366)
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107304 |
Zhang Ting (张婷), Bai Ying (白莹), Jia Cai-Hong (贾彩虹), Zhang Wei-Feng (张伟风) |
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Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells |
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Chin. Phys. B
2012 Vol.21 (10): 107304-107304
[Abstract]
(912)
[HTML 1 KB]
[PDF 1372 KB]
(684)
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47302 |
Liu Zi-Yu(刘紫玉), Zhang Pei-Jian(张培健), Meng Yang(孟洋), Li Dong(李栋), Meng Qing-Yu(孟庆宇), Li Jian-Qi(李建奇), and Zhao Hong-Wu(赵宏武) |
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The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device |
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Chin. Phys. B
2012 Vol.21 (4): 47302-047302
[Abstract]
(1173)
[HTML 1 KB]
[PDF 228 KB]
(898)
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47301 |
Zhang Ting(张婷), Ding Ling-Hong(丁玲红), and Zhang Wei-Feng(张伟风) |
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Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories |
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Chin. Phys. B
2012 Vol.21 (4): 47301-047301
[Abstract]
(1343)
[HTML 1 KB]
[PDF 559 KB]
(912)
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37304 |
Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏) |
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Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches |
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Chin. Phys. B
2010 Vol.19 (3): 37304-037304
[Abstract]
(1911)
[HTML 1 KB]
[PDF 707 KB]
(2082)
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